Organic light emitting display device

ABSTRACT

An organic light emitting display device includes a substrate, a light emitting structure, a first conductive pattern, and a functional module. The substrate has an opening region, a peripheral region surrounding the opening region, and a display region surrounding the peripheral region, and includes a first groove, which has an enlarged lower portion, formed in the peripheral region and an opening formed in the opening region. The light emitting structure is in the display region on the substrate. The first conductive pattern overlaps the first groove in the peripheral region on the substrate. The functional module is in the opening of the substrate.

CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2018-0153568, filed on Dec. 3, 2018, inthe Korean Intellectual Property Office, and entitled: “Organic LightEmitting Display Device,” is incorporated by reference herein in itsentirety.

BACKGROUND 1. Field

Example embodiments relate generally to an organic light emittingdisplay device.

2. Description of the Related Art

A flat panel display (“FPD”) device is widely used as a display deviceof an electronic device because the FPD device is lightweight and thincompared to a cathode-ray tube (“CRT”) display device. Typical examplesof the FPD device are a liquid crystal display (“LCD”) device and anorganic light emitting display (“OLED”) device.

SUMMARY

Embodiments are directed to an organic light emitting display deviceincluding a substrate, a light emitting structure, a first conductivepattern, and a functional module. The substrate has an opening region, aperipheral region surrounding the opening region, and a display regionsurrounding the peripheral region, and includes a first groove, whichhas an enlarged lower portion, formed in the peripheral region and anopening formed in the opening region. The light emitting structure is inthe display region on the substrate. The first conductive patternoverlaps the first groove in the peripheral region on the substrate. Thefunctional module is in the opening of the substrate.

In an example embodiment, the first conductive pattern may include afirst sub-conductive pattern and second sub-conductive patterns. Thefirst sub-conductive pattern may overlap the first groove, and may havea plan shape of a partially opened circle including an open portion. Thesecond sub-conductive patterns may extend from the open portion of thefirst sub-conductive pattern in an outward direction.

In an example embodiment, the OLED device may further include padelectrodes and signal wirings. The pad electrodes may be on thesubstrate, and may be electrically connected to an external device. Thesignal wirings, which are located on the substrate, may be disposedalong an outer portion of the substrate, and may electrically connectthe second sub-conductive patterns and the pad electrodes.

In an example embodiment, the first groove may surround the opening onthe substrate.

In an example embodiment, the first groove may have a plan shape of acircle.

In an example embodiment, the first conductive pattern, which is locatedon the first groove, may be disposed along a profile of an outer portionof the first groove.

In an example embodiment, the substrate may include a first organic filmlayer, a first barrier layer, a second organic film layer, and a secondbarrier layer. The first barrier layer may be on the first organic filmlayer. The second organic film layer may be on the first barrier layer,and may have a trench in the peripheral region. The second barrier layermay be on the second organic film layer, and the second barrier layer,which is located on the trench, may have a protruded portion thatprotrudes in an inner portion of the trench. The second barrier layermay have an opening defined by the protruded portion.

In an example embodiment, the first conductive pattern may overlap theprotruded portion of the second barrier layer.

In an example embodiment, the protruded portion of the second barrierlayer may include a first protruded portion and a second protrudedportion. The first protruded portion may be located adjacent to theopening of the substrate. The second protruded portion may face thefirst protruded portion, and may be spaced apart from the firstprotruded portion in a direction from the opening region into theperipheral region.

In an example embodiment, the OLED device may further include a secondconductive pattern, which is on the first protruded portion, overlappingthe first protruded portion. The first conductive pattern may beoverlapped on the second protruded portion.

In an example embodiment, the first conductive pattern and the secondconductive pattern may be connected to each other in a region of theperipheral region, and may be integrally formed.

In an example embodiment, the trench of the second organic film layer,the protruded portion of the second barrier layer, and the opening ofthe second barrier layer may be defined as the first groove, which hasthe enlarged lower portion, of the substrate.

In an example embodiment, the light emitting structure may include alower electrode, a light emitting layer on the lower electrode, and anupper electrode on the light emitting layer.

In an example embodiment, the light emitting layer may extend in adirection from the display region into the peripheral region on thesubstrate, and may be separated in a portion where the first groove isformed.

In an example embodiment, the upper electrode may extend in a directionfrom the display region into the peripheral region on the substrate, andmay be separated in a portion where the first groove is formed.

In an example embodiment, the light emitting layer and the upperelectrode may be in at least a portion of an inner portion of the firstgroove.

In an example embodiment, the OLED device may further include a thinfilm encapsulation structure on the light emitting structure and a touchscreen structure in the display region on the thin film encapsulationstructure.

In an example embodiment, the thin film encapsulation structure mayinclude a first thin film encapsulation layer, a second thin filmencapsulation layer, and a third thin film encapsulation layer. Thefirst thin film encapsulation layer may be on the upper electrode, andmay include inorganic materials that have flexibility. The second thinfilm encapsulation layer may be on the first thin film encapsulationlayer, and may include organic materials that have flexibility. Thethird thin film encapsulation layer may be on the second thin filmencapsulation layer, and may include inorganic materials that haveflexibility.

In an example embodiment, each of the first thin film encapsulationlayer and the third thin film encapsulation layer may extend in adirection from the display region into the peripheral region on theupper electrode, and may be continuously disposed in a portion where thefirst groove is formed.

In an example embodiment, the touch screen structure may include a firstinsulation layer in the display region on the third thin filmencapsulation layer, a touch screen electrode on the first insulationlayer, a second insulation layer on the touch screen electrode, a touchscreen connection electrode on the second insulation layer, and aprotective insulation layer on the touch screen connection electrode.

In an example embodiment, the first insulation layer may extend in adirection from the display region into the peripheral region on thethird thin film encapsulation layer, and may be continuously disposed ina portion where the first groove is formed.

In an example embodiment, the OLED device may further include an organicinsulation pattern in peripheral region on the first insulation layer.

In an example embodiment, the second insulation layer may be in contactwith an upper surface of the first insulation layer in the displayregion, and may be in contact with an upper surface of the organicinsulation pattern in the peripheral region.

In an example embodiment, the first conductive pattern may be betweenthe second insulation layer and the protective insulation layer.

In an example embodiment, the functional module may be in contact with aside surface of the substrate, a side surface of the light emittinglayer, a side surface of the upper electrode, a side surface of thefirst thin film encapsulation layer, a side surface of the third thinfilm encapsulation layer, a side surface of the first insulation layer,a side surface of the organic insulation pattern, a side surface of thesecond insulation layer, and a side surface of the protective insulationlayer in a boundary of the peripheral region and the opening region.

In an example embodiment, the substrate may further include at least onesecond groove, which has an enlarged lower portion, between the firstgroove and the functional module. The first groove may surround thesecond groove.

In an example embodiment, the substrate may further include at least onethird groove surrounding the first groove.

In an example embodiment, the OLED device may further include a blockstructure between the first groove and the third groove in theperipheral region on the substrate. The block structure may surround thefirst groove.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail example embodiments with reference to the attached drawings inwhich:

FIG. 1 illustrates a perspective view of an organic light emittingdisplay (“OLED”) device in accordance with an example embodiment;

FIG. 2 illustrates a plan view of the OLED device of FIG. 1;

FIGS. 3 and 4 illustrate perspective views for describing an openingformed in the OLED device of FIG. 1;

FIG. 5 illustrates a partially enlarged plan view corresponding toregion ‘A’ of FIG. 2;

FIG. 6 illustrates a plan view for describing a conductive patternincluded in the OLED device of FIG. 5;

FIG. 7 illustrates a block diagram for describing an external deviceelectrically connected to the OLED device of FIG. 6;

FIG. 8 illustrates a cross-sectional view taken along lines I-I′ of FIG.5;

FIG. 9 illustrates a plan view for describing a touch screen structureincluded in the OLED device of FIG. 8;

FIGS. 10 through 20 illustrate cross-sectional views of a method ofmanufacturing an OLED device in accordance with an example embodiment;

FIG. 21 illustrates a plan view of an OLED device in accordance with anexample embodiment;

FIG. 22 illustrates a partially enlarged plan view corresponding toregion ‘13’ of FIG. 21;

FIG. 23 illustrates a partially enlarged plan view of an example of aconductive pattern included in the OLED device of FIG. 22;

FIG. 24 illustrates a cross-sectional view taken along lines I-I′ ofFIG. 22; and

FIG. 25 illustrates a cross-sectional view of an OLED device inaccordance with an example embodiment.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey example implementations to those skilled in the art. In thedrawing figures, the dimensions of layers and regions may be exaggeratedfor clarity of illustration. Like reference numerals refer to likeelements throughout.

FIG. 1 is a perspective view illustrating an organic light emittingdisplay (“OLED”) device in accordance with an example embodiment, andFIG. 2 is a plan view illustrating the OLED device of FIG. 1. FIGS. 3and 4 are perspective views for describing an opening formed in the OLEDdevice of FIG. 1.

Referring to FIGS. 1, 2, 3, and 4, an OLED device 100 may include afunctional module 700, etc. The OLED device 100 may have a first surfaceS1 and a second surface S2. An image may be displayed in the firstsurface S1, and the second surface S2 may be opposite to the firstsurface S1. The functional module 700 may be in a side of the OLEDdevice 100.

As illustrated in FIG. 2, the OLED device 100 may have a display region10, an opening region 20, a peripheral region 30, and a pad region 40.The peripheral region 30 may substantially surround the opening region20, and the display region 10 may substantially surround the peripheralregion 30. In another implementation, the display region 10 may notcompletely surround the peripheral region 30. As illustrated in FIGS. 3and 4, the OLED device 100 may have an opening 910 formed in the openingregion 20. The pad region 40 may be located in a side of the displayregion 10. A plurality of pad electrodes may be in the pad region 40,and the pad electrodes may be electrically connected to an externaldevice. In an example embodiment, the OLED device 100 may have a bendingregion located between the display region 10 and the pad region 40. Forexample, the bending region may be bent on an axis with respect to afirst direction D1 that is parallel to an upper surface of the OLEDdevice 100, and the pad region 40 may be located on a lower surface ofthe OLED device 100.

The display region 10 may include a plurality of sub-pixel regions,which may be arranged in the display region 10 in a matrix form as awhole. A sub-pixel circuit (e.g., a semiconductor element 250 of FIG. 8)may be in the sub-pixel regions each of the display region 10, and anOLED (e.g., a light emitting structure 200 of FIG. 8) may be on thesub-pixel circuit. An image may be displayed in the display region 10through the sub-pixel circuit and the OLED.

For example, first, second, and third sub-pixel circuits may be in thesub-pixel regions, and first, second, and third OLEDs may be on thefirst, second, and third sub-pixel circuits. The first sub-pixel circuitmay be coupled to (or connected to) a first OLED capable of emitting ared color of light, and the second sub-pixel circuit may be coupled to asecond OLED capable of emitting a green color of light. The thirdsub-pixel circuit may be coupled to the third sub-pixel structurecapable of emitting a blue color of light.

In an example embodiment, the first OLED may overlap the first sub-pixelcircuit, and the second OLED may overlap the second sub-pixel circuit.The third OLED may overlap the third sub-pixel circuit. In anotherimplementation, the first OLED may overlap a portion of the firstsub-pixel circuit and a portion of a sub-pixel circuit that is differentfrom the first sub-pixel circuit, and the second OLED may overlap aportion of the second sub-pixel circuit and a portion of a sub-pixelcircuit region that is different from the second sub-pixel circuit. Thethird OLED may overlap a portion of the third sub-pixel circuit and aportion of a sub-pixel circuit that is different from the thirdsub-pixel circuit.

Thus, the first, second, and third OLEDs may be arranged using an RGBstripe method where tetragons of a same size are sequentially arranged,a s-stripe method including a blue OLED having a relatively large area,a WRGB method further including a white OLED, a pen-tile methodrepeatedly arranged in an RG-GB pattern, etc.

In addition, at least one driving transistor, at least one switchingtransistor, and at least one capacitor may be in each of the sub-pixelregions.

In an example embodiment, a shape of the display region 10 may a planshape of a tetragon, for example. In an implementation, the shape of thedisplay region 10 may have a plan shape of a triangle, a plan shape of adiamond, a plan shape of a polygon, a plan shape of a circle, a planshape of an athletic track, a plan shape of an ellipse, etc.

The functional module 700 may be in the opening 910. For example, thefunctional module 700 may include a camera module for capturing (orrecognizing) an image of an object, a face recognition sensor module forsensing a face of a user, a pupil recognition sensor module for sensinga pupil of a user, acceleration and geomagnetic sensor modules fordetermining movement of the OLED device 100, proximity and infraredsensor modules for detecting proximity to the OLED device 100, and alight intensity sensor module for measuring the degree of brightnesswhen left in a pocket or a bag, etc. In an example embodiment, avibration or haptic module for indicating an incoming alarm, a speakermodule for outputting sound, etc., may be in the opening 910.

In an example embodiment, a shape of the opening region 20 and theperipheral region 30 each has a plan shape of a circle, for example. Inan implementation, the shape of the opening region 20 and the peripheralregion 30 each may have a plan shape of a triangle, a plan shape of adiamond, a plan shape of a polygon, a plan shape of a tetragon, a planshape of an athletic track, a plan shape of an ellipse, etc.

FIG. 5 is a partially enlarged plan view corresponding to region ‘A’ ofFIG. 2, and FIG. 6 is a plan view for describing a conductive patternincluded in the OLED device of FIG. 5. FIG. 7 is a block diagram fordescribing an external device electrically connected to the OLED deviceof FIG. 6.

Referring to FIGS. 5, 6, and 7, the OLED device 100 may include aconductive pattern 400, the functional module 700, pad electrodes 470, aconnection wiring 370, etc.

In an example embodiment, the opening 910 may be formed in the openingregion 20, and a groove 930 may be formed in the peripheral region 30.The groove 930 may have a plan shape of a circle in a plan view of theOLED device 100, and may surround the opening region 20. In addition,the groove 930 may have an enlarged (or expanded) lower portion in across-sectional view of the OLED device 100. Thus, a lower portion ofthe groove 930 may be relatively larger than an upper portion of thegroove 930.

The functional module 700 may be in the opening 910, and the conductivepattern 400 may overlap the groove 930. Thus, the conductive pattern 400may be disposed along a profile of an outer portion of the groove 930 onthe groove 930. The conductive pattern 400 may substantially surroundthe functional module 700 (or the opening 910). As illustrated in FIG. 6the conductive pattern 400 may include a first sub-conductive pattern401 and second sub-conductive patterns 402. The first sub-conductivepattern 401 may have a plan shape of a partially opened circle includingan open portion, and the second sub-conductive patterns 402 may extendfrom the open portion of the first sub-conductive pattern 401 in anoutward direction (e.g., a direction from the opening region 20 into theperipheral region 30 or a second direction D2 that is perpendicular tothe first direction D1). In an example embodiment, the firstsub-conductive pattern 401 and the second sub-conductive patterns 402may be integrally formed at a same layer. In another implementation, thefirst sub-conductive pattern 401 may be on the second sub-conductivepatterns 402, and the open portion of the first sub-conductive pattern401 may be connected to a distal end of the second sub-conductivepatterns 402 through a contact hole. In an implementation, the secondsub-conductive patterns 402 may be on the first sub-conductive pattern401, and the open portion of the first sub-conductive pattern 401 may beconnected to a distal end of the second sub-conductive patterns 402through a contact hole. The first sub-conductive pattern 401 may overlapthe groove 930. For example, the first sub-conductive pattern 401 mayoverlap an outermost portion of the groove 930. Thus, the firstsub-conductive pattern 401 may overlap an outer boundary of the groove930. In another implementation, the first sub-conductive pattern 401 mayoverlap an innermost portion of the groove 930. Thus, the firstsub-conductive pattern 401 may overlap an inner boundary of the groove930.

The conductive pattern 400 may include a metal, an alloy of a metal,metal nitride, conductive metal oxide, transparent conductive materials,etc. For example, the conductive pattern 400 may include gold (Au),silver (Ag), aluminum (Al), tungsten (W), copper (Cu), platinum (Pt),nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium(Ca), lithium (Li), chromium (Cr), tantalum (Ta), molybdenum (Mo),scandium (Sc), neodymium (Nd), iridium (Ir), an alloy of aluminum,aluminum nitride (AlN), an alloy of silver, tungsten nitride (WN), analloy of copper, an alloy of molybdenum, titanium nitride (TiN),chromium nitride (CrN), tantalum nitride (TaN), strontium rutheniumoxide (SRO), zinc oxide (ZnO), indium tin oxide (ITO), tin oxide (SnO),indium oxide (InO), gallium oxide (GaO), indium zinc oxide (IZO), etc.These may be used alone or in a suitable combination thereof. In anexample embodiment, the conductive pattern 400 may have a multi-layeredstructure including a plurality of layers.

The pad electrodes 470 may be in the pad region 40. The pad electrodes470 may include a first pad electrode 471 and a second pad electrode472. For example, the first pad electrode 471 may be located in a leftside of the pad region 40, and the second pad electrode 472 may belocated in a right side of the pad region 40. In an example embodiment,extra pad electrodes may be further between the first pad electrode 471and the second pad electrode 472. The pad electrodes 470 may include ametal, an alloy of a metal, metal nitride, conductive metal oxide,transparent conductive materials, etc. These may be used alone or in asuitable combination thereof. In an example embodiment, the padelectrodes 470 may have a multi-layered structure including a pluralityof layers.

The connection wiring 370 may be in an outer portion of the displayregion 10 and the pad region 40. The connection wiring 370 may include afirst connection wiring 371 and a second connection wiring 372. A firstdistal end of the first connection wiring 371 may be connected to thesecond sub-conductive pattern 402 located in a left side of the secondsub-conductive patterns 402, and the first connection wiring 371 mayextend along a profile of an outer portion of the display region 10 andpad region 40 in a counterclockwise direction. A second distal end,which is opposite to the first distal end, of the first connectionwiring 371 may be connected to the first pad electrode 471 in the padregion 40. Similarly, a first distal end of the second connection wiring372 may be connected to the second sub-conductive pattern 402 located ina right side of the second sub-conductive patterns 402, and the secondconnection wiring 372 may extend along a profile of an outer portion ofthe display region 10 and pad region 40 in a clockwise direction. Asecond distal end, which is opposite to the first distal end, of thesecond connection wiring 372 may be connected to the second padelectrode 472 in the pad region 40. Thus, the connection wiring 370 mayelectrically connect the conductive pattern 400 and the pad electrodes470. The connection wiring 370 may include a metal, an alloy of a metal,metal nitride, conductive metal oxide, transparent conductive materials,etc. These may be used alone or in a suitable combination thereof. In anexample embodiment, the connection wiring 370 may have a multi-layeredstructure including a plurality of layers.

As illustrated in FIG. 7, an external device 101 may be electricallyconnected to the OLED device 100 through a flexible printed circuitboard (“FPCB”). For example, one side of the FPCB may be in directcontact with the pad electrodes 470, and another side of the FPCB may bein direct contact with the external device 101. Thus, the externaldevice 101 may electrically connect the first pad electrode 471 and thesecond pad electrode 472, and may measure a resistance value between thefirst and second pad electrodes 471 and 472.

A general OLED device may include a substrate, and a groove having anenlarged lower portion may be formed in the substrate. The substrate mayhave a stack structure where a first organic film layer, a first barrierlayer, a second organic film layer, and a second barrier layer aresequentially stacked. As the groove is formed in the substrate, a lightemitting layer and an upper electrode may be separated (or cut, etc.) ina peripheral region. For example, the groove having the enlarged lowerportion may have an under-cut shape, and the second organic film layerand the second barrier layer may be formed in the peripheral region 30.The second organic film layer may have a trench of a second width, andthe second barrier layer may have an opening of a first width thatoverlaps the trench. The first width may be less than the second width.In addition, a protruded portion of the second barrier layer locatedadjacent to the opening may be defined as a tip, and the light emittinglayer and the upper electrode may be separated in the peripheral regionthrough the tip. However, the tip may be easily damaged by externalimpacts or a stress in a manufacturing process (e.g., a removal of topand/or bottom protection films, etc.). When the tip is damaged, thelight emitting layer and the upper electrode may not be separated in theperipheral region, and moisture and/or water may be penetrated throughthe light emitting layer and the upper electrode. Thus, a defect of apixel included in the general OLED device may occur by the moistureand/or water. Thus, a defect of the general OLED device may occur due toa damage of the tip, such damage to the tip should be checked for in amanufacturing process of the general OLED device. However, it may not bestraightforward to visually observe the damage of the tip.

In an example embodiment, the OLED device 100 includes the conductivepattern 400, the pad electrodes 470, and the connection wiring 370, andthe OLED device 100 may check whether the tip is damaged. For example,the OLED device 100 may measure a resistance value between the first andsecond pad electrodes 471 and 472 by using the external device 101.Accordingly, the OLED device 100 may check whether the tip is damaged byusing the resistance value. Here, when the damage of the tip isgenerated, the resistance value may be increased or it may be in an openstate by a cut of the conductive pattern 400. Thus, a defect ratio ofthe OLED device 100 may be reduced by the OLED device 100 checkingwhether the tip is damaged.

In an example embodiment, the external device 101 may generate a datasignal, a gate signal, a light emission signal, a gate initializationsignal, an initialization voltage, a power supply, etc. As describedabove, the extra pad electrodes may be further between the first andsecond pad electrodes 471 and 472, and the external device 101 may beelectrically connected to the extra pad electrodes. In this case, theexternal device 101 may provide the data signal, the gate signal, thelight emission signal, the gate initialization signal, theinitialization voltage, the power supply, etc. to the OLED device 100.In addition, a driving integrated circuit may be installed in the FPCB.In another implementation, the driving integrated circuit may beinstalled in a portion, which is located adjacent to the pad electrode470, of the OLED device 100.

FIG. 8 is a cross-sectional view taken along lines I-I′ of FIG. 5, andFIG. 9 is a plan view for describing a touch screen structure includedin the OLED device of FIG. 8.

Referring to FIGS. 8 and 9, the OLED device 100 may include a substrate110, a semiconductor element 250, a planarization layer 270, a lightemitting structure 200, a pixel defining layer 310, a thin filmencapsulation (“TFE”) structure 450, a touch screen structure 380, anorganic insulation pattern 490, a conductive pattern 400, a functionalmodule 700, etc. The substrate 110 may include a first organic filmlayer 111, a first barrier layer 112, a second organic film layer 113,and a second barrier layer 114. In the OLED device 100 having thedisplay region 10, the opening region 20, the peripheral region 30, andthe pad region 40, the substrate 110 may be divided into the displayregion 10, the opening region 20, the peripheral region 30, and the padregion 40. In addition, the semiconductor element 250 may include anactive layer 130, a gate insulation layer 150, a gate electrode 170, aninsulating interlayer 190, a source electrode 210, and a drain electrode230, and the light emitting structure 200 may include a lower electrode290, a light emitting layer 330, and an upper electrode 340. Further,the TFE structure 450 may include a first TFE layer 451, a second TFElayer 452, and a third TFE layer 453, and the touch screen structure 380may include a first insulation layer 390, a plurality of first touchscreen electrodes 382, a plurality of second touch screen electrodes384, a plurality of touch screen connection electrodes 386, a secondinsulation layer 395, and a protective insulation layer 410.

In an example embodiment, the substrate 110 may further include a groove930 formed in the peripheral region 30, and each of the light emittinglayer 330 and the upper electrode 340 may be separated in an innerportion (or an inside) of the groove 930. Thus, each of the lightemitting layer 330 and the upper electrode 340 may be separated in theinner portion of the groove 930. In the OLED device 100 having the lightemitting layer 330 and the upper electrode 340 that are separated in theinner portion of the groove 930, the OLED device 100 may block moisture,water, etc. from permeating into the semiconductor element 250 and thelight emitting structure 200. In addition, the substrate 110 may have anopening 910 formed in the opening region 20, and the functional module700 may be in the opening 910 (refer to FIG. 20).

The first organic film layer 111 may be provided. The first organic filmlayer 111 may include organic materials having flexibility. For example,the first organic film layer 111 may include a random copolymer or ablock copolymer. In addition, the first organic film layer 111 may havea high transparency, a low coefficient of thermal expansion, and a highglass transition temperature. In the case that the first organic filmlayer 111 includes an imide radical, a heat resistance, a chemicalresistance, a wear resistance, and an electrical characteristics may beexcellent. In an example embodiment, the first organic film layer 111may include polyimide.

The first barrier layer 112 may be on the entire first organic filmlayer 111. The first barrier layer 112 may block water and/or moisturethat is permeated through the first organic film layer 111. The firstbarrier layer 112 may include inorganic materials having flexibility. Inan example embodiment, the first barrier layer 112 may include siliconoxide, silicon nitride, etc. For example, the first barrier layer 112may include silicon oxide (SiO), silicon nitride (SiN), siliconoxynitride (SiON), silicon oxycarbide (SiOC), silicon carbon nitride(SiCN), aluminum oxide (AlO), aluminum nitride (AlN), tantalum oxide(TaO), hafnium oxide (HfO), zirconium oxide (ZrO), titanium oxide (TiO),etc.

The second organic film layer 113 may be on the entire first barrierlayer 112. In an example embodiment, the second organic film layer 113may have a trench in the peripheral region 30. Thus, a portion of thesecond organic film layer 113 located in the peripheral region 30 may bepartially removed. A width of the trench may be defined as a secondwidth W2 (refer to FIG. 13). In another implementation, a portion of thesecond organic film layer 113 located in the peripheral region 30 may becompletely removed, such that the second organic film layer 113 may havean opening in the peripheral region 30. In this case, an upper surfaceof the first barrier layer 112 may be exposed through the opening.

The second organic film layer 113 may include organic materials havingflexibility. For example, the first barrier layer 112 may include randomcopolymer or block copolymer. In an example embodiment, the secondorganic film layer 113 may include polyimide.

The second barrier layer 114 may be on the entire second organic filmlayer 113. In an example embodiment, the second barrier layer 114 mayhave an opening in the peripheral region 30. Thus, the second barrierlayer 114 may have first and second protruded portions 116 and 117 (or atip) that protrude in an inner portion of the trench on the trench, andmay have an opening defined by the first and second protruded portions116 and 117. For example, the first protruded portion 116 may be locatedadjacent to a boundary of the peripheral region 30 and the openingregion 20 (e.g., the opening 910 of the substrate 110). The secondprotruded portion 117 may face the first protruded portion 116, and maybe spaced apart from the first protruded portion 116. A width of theopening of the second barrier layer 114 may have a first width W1 thatis less than the second width W2 (refer to FIG. 13). In addition, aspace located under each of the first and second protruded portions 116and 117 may be defined as first and second spaces 118 and 119 (refer toFIG. 14). The trench of the second organic film layer 113, the first andsecond protruded portions 116 and 117 of the second barrier layer 114,and the opening of the second barrier layer 114 may be defined as thegroove 930, which has an enlarged lower portion, formed in the OLEDdevice 100 located in the peripheral region 30. For example, the groove930 having the enlarged lower portion may have an under-cut shape. Thegroove 930 may serve as a block pattern capable of blocking water and/ormoisture permeated from the opening region 20 into the display region10. In an example embodiment, a plurality of grooves may be formedbetween the groove 930 and the functional module 700, and may be formedbetween the light emitting structure 200 and the groove 930 that arelocated adjacent to a boundary of the display region 10 and theperipheral region 30.

The second barrier layer 114 may block water and/or moisture that ispermeated through the second organic film layer 113. The second barrierlayer 114 may include inorganic materials having flexibility. In anexample embodiment, the second barrier layer 114 may include SiO, SiN,etc.

Accordingly, the substrate 110 including the first organic film layer111, the first barrier layer 112, the second organic film layer 113, andthe second barrier layer 114 may be disposed.

In an example embodiment, the substrate 110 includes four layers, butthe substrate 110 may include, for example, a single layer or at leasttwo layers.

In an example embodiment, the substrate 110 may include transparent oropaque materials. For example, the substrate 110 may include a quartzsubstrate, a synthetic quartz substrate, a calcium fluoride substrate, afluoride-doped quartz substrate, a soda-lime glass substrate, anon-alkali glass substrate, etc.

The buffer layer may be on the substrate 110 (e.g., the second barrierlayer 114). For example, the buffer layer may be on the entire substrate110 except for the peripheral region 30. In another implementation, thebuffer layer may be in the peripheral region 30 on the substrate 110. Inthis case, the buffer layer may have an opening overlapping the openingof the second barrier layer 114. The buffer layer may help prevent thediffusion of metal atoms and/or impurities from the substrate 110 intothe semiconductor element 250 and the light emitting structure 200. Inaddition, the buffer layer may control a rate of a heat transfer in acrystallization process for forming an active layer, thereby obtainingsubstantially uniform active layer. Further, the buffer layer mayimprove a surface flatness of the substrate 110 when a surface of thesubstrate 110 is relatively irregular. According to a type of thesubstrate 110, at least two buffer layers may be provided on thesubstrate 110, or the buffer layer may not be disposed. For example, thebuffer layer may include organic materials or inorganic materials.

The active layer 130 may be in the display region 10 on the substrate110. The active layer 130 may include an oxide semiconductor, aninorganic semiconductor (e.g., amorphous silicon, polysilicon, etc.), anorganic semiconductor, etc. The active layer 130 may have a sourceregion and a drain region.

The gate insulation layer 150 may be on the active layer 130. The gateinsulation layer 150 may cover the active layer 130 in the displayregion 10 on the substrate 110, and may not be in the peripheral region30. Thus, the gate insulation layer 150 may be only in the displayregion 10 on the substrate 110. For example, the gate insulation layer150 may sufficiently cover the active layer 130 on the substrate 110,and may have a substantially flat upper surface without a step aroundthe active layer 130. In another implementation, the gate insulationlayer 150 may cover the active layer 130 on the substrate 110, and maybe disposed with a substantially uniform thickness along a profile ofthe active layer 130. The gate insulation layer 150 may include siliconcompound, metal oxide, etc. In an example embodiment, the gateinsulation layer 150 may have a multi-layered structure including aplurality of insulation layers. For example, the insulation layers mayhave different thicknesses to each other or include different materialsto each other.

The gate electrode 170 may be in the display region 10 on the gateinsulation layer 150. The gate electrode 170 may be on a portion of thegate insulation layer 150 under which the active layer 130 is located.The gate electrode 170 may include a metal, a metal alloy, metalnitride, conductive metal oxide, transparent conductive materials, etc.These may be used alone or in a suitable combination thereof. In anotherimplementation, the gate electrode 170 may have a multi-layeredstructure including a plurality of layers.

The insulating interlayer 190 may be on the gate electrode 170. Theinsulating interlayer 190 may cover the gate electrode 170 in thedisplay region 10 on the gate insulation layer 150, and may not be inthe peripheral region 30. Thus, the insulating interlayer 190 may beonly in the display region 10 on the gate insulation layer 150. Forexample, the insulating interlayer 190 may sufficiently cover the gateelectrode 170 on the gate insulation layer 150, and may have asubstantially flat upper surface without a step around the gateelectrode 170. In another implementation, the insulating interlayer 190may cover the gate electrode 170 on the gate insulation layer 150, andmay be disposed with a substantially uniform thickness along a profileof the gate electrode 170. The insulating interlayer 190 may includesilicon compound, metal oxide, etc. In an example embodiment, theinsulating interlayer 190 may have a multi-layered structure including aplurality, of insulation layers. The insulation layers may havedifferent thicknesses to each other or include different materials toeach other.

The source electrode 210 and the drain electrode 230 may be in thedisplay region 10 on the insulating interlayer 190. The source electrode210 may be connected to the source region of the active layer 130 via acontact hole formed by removing a first portion of the gate insulationlayer 150 and the insulating interlayer 190. The drain electrode 230 maybe connected to the drain region of the active layer 130 via a contacthole formed by removing a second portion of the gate insulation layer150 and the insulating interlayer 190. Each of the source electrode 210and the drain electrode 230 may include a metal, an alloy, metalnitride, conductive metal oxide, transparent conductive materials, etc.These may be used alone or in a suitable combination thereof. In anexample embodiment, each of the source and drain electrodes 210 and 230may have a multi-layered structure including a plurality of layers.Accordingly, the semiconductor element 250 including the active layer130, the gate insulation layer 150, the gate electrode 170, theinsulating interlayer 190, the source electrode 210, and the drainelectrode 230 may be disposed.

In an example embodiment, the semiconductor element 250 may have a topgate structure, for example. In another implementation, in an exampleembodiment, the semiconductor element 250 may have a bottom gatestructure, a double gate structure, etc.

In addition, the OLED device 100 may include one semiconductor element,for example. In another implementation, in an example embodiment, theOLED device 100 may include at least one semiconductor element and atleast one capacitor.

The planarization layer 270 may be on the insulating interlayer 190, thesource electrode 210, and the drain electrode 230. The planarizationlayer 270 may cover the source and drain electrodes 210 and 230 in thedisplay region 10 on the insulating interlayer 190, and may not be inthe peripheral region 30. Thus, the planarization layer 270 may be onlyin the display region 10 on the insulating interlayer 190. For example,the planarization layer 270 may be disposed with a relatively highthickness in the display region 10. In this case, the planarizationlayer 270 may have a substantially flat upper surface, and aplanarization process may be further performed on the planarizationlayer 270 to implement the flat upper surface of the planarization layer270. In another implementation, the planarization layer 270 may bedisposed with a substantially uniform thickness along a profile of thesource and drain electrodes 210 and 230 in the display region 10 on theinsulating interlayer 190. The planarization layer 270 may includeorganic materials or inorganic materials. In an example embodiment, theplanarization layer 270 may include organic materials.

The lower electrode 290 may be in the display region 10 on theplanarization layer 270. The lower electrode 290 may be connected to thedrain electrode 230 via a contact hole formed by removing a portion ofthe planarization layer 270. In addition, the lower electrode 290 may beelectrically connected to the semiconductor element 250. The lowerelectrode 290 may include a metal, a metal alloy, metal nitride,conductive metal oxide, transparent conductive materials, etc. These maybe used alone or in a suitable combination thereof. In an exampleembodiment, the lower electrode 290 may have a multi-layered structureincluding a plurality of layers.

The pixel defining layer 310 may be in the display region 10 on theplanarization layer 270, and may not be in the peripheral region 30.Thus, the pixel defining layer 310 may be only in the display region 10.For example, the pixel defining layer 310 may cover both lateralportions of the lower electrode 290, and may expose a portion of anupper surface of the lower electrode 290. The pixel defining layer 310may include organic materials or inorganic materials. In an exampleembodiment, the pixel defining layer 310 may include organic materials.

The light emitting layer 330 may be on the pixel defining layer 310 andthe lower electrode 290 in the display region 10 and extend in the firstdirection D1, and may be in the peripheral region 30 on the substrate110. In an example embodiment, the light emitting layer 330 may bepartially in an inner portion of the groove 930, and the light emittinglayer 330 in a portion where the groove 930 is located may be separatedin a depth direction (e.g., a direction from the second barrier layer114 into the first organic film layer 111). Thus, the light emittinglayer 330 may be separated in the peripheral region 30. Thus, the lightemitting layer 330 may be separated in the peripheral region 30 by thefirst and second spaces 118 and 119.

For example, when the groove 930 does not have the first and secondprotruded portions 116 and 117, the light emitting layer 330 may becontinuously disposed in a portion where the groove 930 is formed, andthe light emitting layer 330 may act as a permeability path of waterand/or moisture. Thus, a portion of the light emitting layer 330 (e.g.,a side distal end of the light emitting layer 330) may be exposed in theopening region 20, and the water and/or moisture may permeate into theexposed portion of the light emitting layer 330. In this case, thesemiconductor element 250 and the light emitting structure 200 that arein the display region 10 located adjacent to the peripheral region 30may be damaged by the water and/or moisture. Meanwhile, in accordancewith an example embodiment, the OLED device 100 includes the groove 930having the enlarged lower portion. Thus, the light emitting layer 330may be separated in the inner portion of the groove 930, such that thepermeation path of the light emitting layer 330 may be blocked.Accordingly, when the light emitting layer 330 is in the peripheralregion 30, a defect of a pixel included in the OLED device 100 may notoccur.

The light emitting layer 330 may have a multi-layered structureincluding an organic light emission layer (“EML”), a hole injectionlayer (“HIL”), a hole transport layer (“HTL”), an electron transportlayer (“ETL”), an electron injection layer (“EIL”), etc. In an exampleembodiment, the EML, the HIL, the HTL, the ETL, and the EIL may be inthe peripheral region 30. In an example embodiment, the HIL, the HTL,the ETL, and the EIL except for the EML may be in the peripheral region30.

The EML of the light emitting layer 330 may be formed using at least oneof light emitting materials capable of generating different colors oflight (e.g., a red color of light, a blue color of light, and a greencolor of light, etc.) according to sub-pixels. In anotherimplementation, the EML of the light emitting layer 330 may generallygenerate a white color of light by stacking a plurality of lightemitting materials capable of generating different colors of light suchas a red color of light, a green color of light, a blue color of light,etc. In this case, a color filter may be on the light emitting layer 330that is located on the lower electrode 290. The color filter may includeat least one selected from a red color filter, a green color filter, anda blue color filter. In another implementation, the color filter mayinclude a yellow color filter, a cyan color filter, and a magenta colorfilter. The color filter may include a photosensitive resin, a colorphotoresist, etc.

The upper electrode 340 may be on the light emitting layer 330. Theupper electrode 340 may overlap the light emitting layer 330 in thedisplay region 10 and extend in the first direction D1, and may be inthe peripheral region 30 on the light emitting layer 330. In an exampleembodiment, the upper electrode 340 may be partially in the innerportion of the groove 930, and the upper electrode 340 in a portionwhere the groove 930 is located may be separated in the depth direction.Thus, the upper electrode 340 may be separated in the peripheral region30. Thus, the upper electrode 340 may be separated in the peripheralregion 30 by the first and second spaces 118 and 119.

For example, when the groove 930 does not have the first and secondprotruded portions 116 and 117, the upper electrode 340 may becontinuously disposed in a portion where the groove 930 is formed, andthe upper electrode 340 may act as a permeation path of water and/ormoisture. Thus, a portion of the upper electrode 340 (e.g., a sidedistal end of the upper electrode 340) may be exposed in the openingregion 20, and the water and/or moisture may permeate into the exposedportion of the upper electrode 340. In this case, the semiconductorelement 250 and the light emitting structure 200 that are in the displayregion 10 located adjacent to the peripheral region 30 may be damaged bythe water and/or moisture. Meanwhile, in accordance with an exampleembodiment, the OLED device 100 may include the groove 930 having theenlarged lower portion. Thus, the upper electrode 340 may be separatedin the inner portion of the groove 930. Thus, as the upper electrode 340is separated in the inner portion of the groove 930, the permeation pathof the upper electrode 340 may be blocked. Accordingly, when the upperelectrode 340 is in the peripheral region 30, a defect of a pixelincluded in the OLED device 100 may not occur.

The upper electrode 340 may include a metal, a metal alloy, metalnitride, conductive metal oxide, transparent conductive materials, etc.These may be used alone or in a suitable combination thereof. In anexample embodiment, the upper electrode 340 may have a multi-layeredstructure including a plurality of layers.

Accordingly, the light emitting structure 200 including the lowerelectrode 290, the light emitting layer 330, and the upper electrode 340may be disposed.

A capping layer may be on the upper electrode 340. The capping layer mayoverlap the upper electrode 340 in the display region 10 and extend inthe first direction D1, and may be in the peripheral region 30 on theupper electrode 340. In an example embodiment, the capping layer may bepartially in the inner portion of the groove 930, and the capping layerin a portion where the groove 930 is located may be separated in thedepth direction. Thus, the capping layer may be separated in theperipheral region 30. Thus, the capping layer may be separated in theperipheral region 30 by the first and second spaces 118 and 119.

For example, when the groove 930 does not have the first and secondprotruded portions 116 and 117, the capping layer may be disposedcontinuously in a portion where the groove 930 is formed, and thecapping layer may act as a permeation path of water and/or moisture.Thus, a portion of the capping layer (e.g., a side distal end of thecapping layer) may be exposed in the opening region 20, and the waterand/or moisture may permeate into the exposed portion of the cappinglayer. In this case, the semiconductor element 250 and the lightemitting structure 200 that are in the display region 10 locatedadjacent to the peripheral region 30 may be damaged by the water and/ormoisture. Meanwhile, in accordance with an example embodiment, the OLEDdevice 100 includes the groove 930 having the enlarged lower portion.Thus, the capping layer may be separated in the inner portion of thegroove 930. Thus, as the capping layer is separated in the inner portionof the groove 930, the permeation path of the capping layer may beblocked. Accordingly, when the capping layer is in the peripheral region30, a defect of a pixel included in the OLED device 100 may not occur.

The capping layer may protect the light emitting structure 200, and mayinclude organic materials or inorganic materials. In an exampleembodiment, the capping layer may include organic materials such as atriamine derivative, arylenediamine derivative,4,4′-N,N′-dicarbazole-biphenyl (“CBP”), tris(8-hydroxyquinolate)aluminum(“Alq3”), etc.

The first TFE layer 451 may be in the display region 10 and theperipheral region 30 on the upper electrode 340. The first TFE layer 451may cover the upper electrode 340 in the display region 10, and may bedisposed with a substantially uniform thickness along a profile of theupper electrode 340 and may extend in the peripheral region 30. Thefirst TFE layer 451 may be disposed along a profile of the upperelectrode 340 in the peripheral region 30. Thus, the first TFE layer 451may be continuously disposed in a portion where the groove 930 isformed. In an example embodiment, the first TFE layer 451 may completelycover the groove 930. Thus, the first TFE layer 451 may cover the firstand second protruded portions 116 and 117, and may be in the first andsecond spaces 118 and 119 and completely cover the light emitting layer330 and the upper electrode 340 that are disposed inside the groove 930.Thus, the first TFE layer 451 may be in direct contact with the secondorganic film layer 113 in the first and second spaces 118 and 119. Thefirst TFE layer 451 may help prevent the light emitting structure 200from being deteriorated by the permeation of moisture, water, oxygen,etc. In addition, the first TFE layer 451 may protect the light emittingstructure 200 from external impacts. The first TFE layer 451 may includeinorganic materials having flexibility.

The second TFE layer 452 may be in the display region 10 on the firstTFE layer 451, and may not be in the peripheral region 30. Thus, thesecond TFE layer 452 may be only in the display region 10. In anotherimplementation, the second TFE layer 452 may be in a portion of theperipheral region 30. The second TFE layer 452 may improve the flatnessof the OLED device 100, and may protect the light emitting structure200. The second TFE layer 452 may include organic materials having theflexibility.

The third TFE layer 453 may be in the display region 10 on the secondTFE layer 452 and in the peripheral region 30 on the first TFE layer451. The third TFE layer 453 may cover the second TFE layer 452 in thedisplay region 10, and may be disposed with a substantially uniformthickness along a profile of the second TFE layer 452 and may extend inthe peripheral region 30. The third TFE layer 453 may be disposed with asubstantially uniform thickness along a profile of the first TFE layer451 in the peripheral region 30. Thus, the third TFE layer 453 may becontinuously formed in a portion where the groove 930 is formed. Thethird TFE layer 453 together with the first TFE layer 451 may helpprevent the light emitting structure 200 from being deteriorated by thepermeation of moisture, water, oxygen, etc. In addition, the third TFElayer 453 together with the first and second TFE layers 451 and 452 mayprotect the light emitting structure 200 from external impacts. Thethird TFE layer 453 may include inorganic materials having theflexibility.

Accordingly, the TFE structure 450 including the first TFE layer 451,the second TFE layer 452, and the third TFE layer 453 may be disposed.In another implementation, the TFE structure 450 may have five layersstructure where first to fifth TFE layers are stacked or seven layersstructure where first to seventh TFE layers are stacked.

The first insulation layer 390 may be in the display region 10 and theperipheral region 30 on the third TFE layer 453. The first insulationlayer 390 may cover the third TFE layer. 453 in the display region 10,and may be disposed with a substantially uniform thickness along aprofile of the third TFE layer 453 and may extend in the peripheralregion 30. The first insulation layer 390 may be disposed with asubstantially uniform thickness along a profile of the third TFE layer453 in the peripheral region 30. Thus, the first insulation layer 390may be continuously disposed in a portion where the first insulationlayer 390 is formed. The first insulation layer 390 may include organicmaterials or inorganic materials. In another implementation, the firstinsulation layer 390 may have a multi-layered structure including aplurality of insulation layers. For example, the insulation layers mayhave different thicknesses to each other or include different materialsto each other.

The organic insulation pattern 490 may be in the peripheral region 30 onthe first insulation layer 390. In an example embodiment, the organicinsulation pattern 490 may be only in the peripheral region 30. Inanother implementation, the organic insulation pattern 490 may be in aportion of the display region 10. The organic insulation pattern 490 maybe disposed with a relatively high thickness in the peripheral region 30on the first insulation layer 390. In this case, the organic insulationpattern 490 may have a substantially flat upper surface, and aplanarization process may be further performed on the organic insulationpattern 490 to implement the flat upper surface of the organicinsulation pattern 490. In another implementation, the organicinsulation pattern 490 may be disposed with a substantially uniformthickness along a profile of the first insulation layer 390 in thedisplay region 10 on the first insulation layer 390. The organicinsulation pattern 490 may include organic materials or inorganicmaterials. In an example embodiment, the organic insulation pattern 490may include organic materials such as a photoresist, a polyacryl-basedresin, a polyimide-based resin, a polyamide-based resin, asiloxane-based resin, an acryl-based resin, an epoxy-based resin, etc.

The first touch screen electrodes 382 and the second touch screenelectrodes 384 may be in the display region 10 on the first insulationlayer 390. As illustrated in FIG. 9, each of the first touch screenelectrodes 382 may extend in the second direction D2, and may be spacedapart from each other by the first direction D1. The second touch screenelectrodes 384 may be spaced apart from each other in the seconddirection D2 between adjacent two first touch screen electrodes 382among the first touch screen electrodes 382. For example, each of thefirst and second touch screen electrodes 382 and 384 may include acarbon nano-tube (CNT), transparent conductive oxide, ITO, indiumgallium zinc oxide (IGZO), ZnO, a graphene, Ag nanowire (AgNW), Cu, Cr,etc.

The second insulation layer 395 may be in the display region 10 on thefirst and second touch screen electrodes 382 and 384. The secondinsulation layer 395 may cover the first and second touch screenelectrodes 382 and 384 in the display region 10, and may be disposedwith a substantially uniform thickness along a profile of the first andsecond touch screen electrodes 382 and 384 and may extend in theperipheral region 30. The second insulation layer 395 may be disposedalong a profile of the organic insulation pattern 490 in the peripheralregion 30. Thus, the second insulation layer 395 may be in contact withan upper surface of the first insulation layer 390 in the display region10, and may be in contact with an upper surface of the organicinsulation pattern 490 in the peripheral region 30. The secondinsulation layer 395 may include organic materials or inorganicmaterials. In another implementation, the second insulation layer 395may have a multi-layered structure including a plurality of insulationlayers. The insulation layers may have different thicknesses to eachother or include different materials to each other.

The touch screen connection electrodes 386 may be in the display region10 on the second insulation layer 395. As illustrated in FIG. 9, thetouch screen connection electrodes 386 may electrically connect adjacenttwo second touch screen electrodes 384 in the first direction D1 amongthe second touch screen electrodes 384 through a contact hole. Forexample, the touch screen connection electrodes 386 and the first andsecond touch screen electrodes 382 and 384 may have same materials. Inanother implementation, the touch screen connection electrodes 386 may,include a metal, an alloy of a metal, metal nitride, conductive metaloxide, transparent conductive materials, etc. These may be used alone orin a suitable combination thereof.

The conductive pattern 400 may be in the peripheral region 30 on thesecond insulation layer 395. In an example embodiment, to detect adamage of the second protruded portion 117 (or the first protrudedportion 116), the conductive pattern 400 may overlap the secondprotruded portion 117 of the groove 930. In another implementation, theconductive pattern 400 may overlap the first protruded portion 116.

For example, the conductive pattern 400 on the groove 930 may bedisposed along a profile of the second protruded portion 117 of thegroove 930. The conductive pattern 400 may substantially surround thefunctional module 700 (or the opening 910). The conductive pattern 400may include a first sub-conductive pattern 401 and second sub-conductivepatterns 402 (refer to FIG. 6). The first sub-conductive pattern 401 mayhave a plan shape of a partially opened circle including an openportion, and the second sub-conductive patterns 402 may extend from theopen portion of the first sub-conductive pattern 401 in the seconddirection D2. In an example embodiment, the first sub-conductive pattern401 and the second sub-conductive patterns 402 may be integrally formedat a same layer.

In another implementation, the first sub-conductive pattern 401 may beon the second sub-conductive patterns 402, and the open portion of thefirst sub-conductive pattern 401 may be connected to a distal end of thesecond sub-conductive patterns 402 through a contact hole. In anotherimplementation, the second sub-conductive patterns 402 may be on thefirst sub-conductive pattern 401, and the open portion of the firstsub-conductive pattern 401 may be connected to a distal end of thesecond sub-conductive patterns 402 through a contact hole.

The first sub-conductive pattern 401 may overlap the groove 930. Forexample, the first sub-conductive pattern 401 may overlap an outermostportion of the groove 930. Thus, the first sub-conductive pattern 401may overlap an outer boundary of the groove 930. In anotherimplementation, the first sub-conductive pattern 401 may overlap aninnermost portion of the groove 930. Thus, the first sub-conductivepattern 401 may overlap an inner boundary of the groove 930.

The conductive pattern 400 and the touch screen connection electrodes386 may be simultaneously formed using same materials. In anotherimplementation, the conductive pattern 400 and the first and secondtouch screen electrodes 382 and 384 may be simultaneously formed usingsame materials.

The protective insulation layer 410 may be in the display region 10 andthe peripheral region 30 on the second insulation layer 395, the touchscreen connection electrodes 386, and the conductive pattern 400. Theprotective insulation layer 410 may be disposed with a relatively highthickness on the second insulation layer 395. In this case, theprotective insulation layer 410 may have a substantially flat uppersurface. In another implementation, the protective insulation layer 410may cover the touch screen connection electrodes 386 and the conductivepattern 400 in the display region 10 and the peripheral region 30 on thesecond insulation layer 395, and may be disposed with a substantiallyuniform thickness along a profile of the touch screen connectionelectrodes 386 and the conductive pattern 400. The protective insulationlayer 410 may include organic materials or inorganic materials. In anexample embodiment, the protective insulation layer 410 may includeorganic materials.

As described above, the touch screen structure 380 including the firstinsulation layer 390, the first touch screen electrodes 382, the secondtouch screen electrodes 384, the second insulation layer 395, the touchscreen connection electrodes 386, and the protective insulation layer410 may be arranged.

The functional module 700 may be in the opening region 20. In an exampleembodiment, the functional module 700 may be in contact with a sidesurface of the substrate 110, a side surface of the light emitting layer330, a side surface of the upper electrode 340, a side surface of thefirst TFE layer 451, a side surface of the third TFE layer 453, a sidesurface of the first insulation layer 390, a side surface of the organicinsulation pattern 490, a side surface of the second insulation layer395, and a side surface of the protective insulation layer 410 in aboundary of the peripheral region 30 and the opening region 20.

For example, the functional module 700 may include a camera module, aface recognition sensor module, a pupil recognition sensor module,acceleration and geomagnetic sensor modules, proximity and infraredsensor modules, and a light intensity sensor module, etc. In an exampleembodiment, a vibration or haptic module for indicating an incomingalarm, a speaker module for outputting sound, etc. may be in the opening910.

The OLED device 100 in accordance with an example embodiment includesthe conductive pattern 400, the pad electrodes 470, and the connectionwiring 370. Thus, the OLED device 100 may check whether the secondprotruded portion 117 is damaged. Accordingly, a defect ratio of theOLED device 100 may be reduced by the OLED device 100 checking whetherthe second protruded portion 117 is damaged.

FIGS. 10 through 20 are cross-sectional views illustrating a method ofmanufacturing an OLED device in accordance with an example embodiment.

Referring to FIG. 10, a rigid glass substrate 105 may be provided. Afirst organic film layer 111 may be formed on the rigid glass substrate105. The first organic film layer 111 may be formed on the entire rigidglass substrate 105, and may be formed using organic materials havingflexibility such as polyimide.

A first barrier layer 112 may be formed on the entire first organic filmlayer 111. The first barrier layer 112 may block water and/or moisturethat is permeated through the first organic film layer 111. The firstbarrier layer 112 may be formed using inorganic materials havingflexibility such as silicon oxide, silicon nitride, etc. For example,the first barrier layer 112 may include SiO, SiN, SiON, SiOC, SiCN, AlO,AlN, TaO, HfO, ZrO, TiO, etc.

A second organic film layer 113 may be formed on the first barrier layer112. The second organic film layer 113 may be formed on the entire firstbarrier layer 112, and may be formed using organic materials havingflexibility such as polyimide.

A second barrier layer 114 may be formed on the entire second organicfilm layer 113. The second barrier layer 114 may block water and/ormoisture that is permeated through the second organic film layer 113.The second barrier layer 114 may be formed using inorganic materialshaving flexibility such as SiO, S. N, etc.

Accordingly, a substrate 110 including the first organic film layer 111,the first barrier layer 112, the second organic film layer 113, and thesecond barrier layer 114 may be formed.

The substrate 110 may be relatively thin and flexible. Thus, thesubstrate 110 may be formed on a rigid glass substrate 105 to helpsupport the formation of an upper structure (e.g., a semiconductorelement and a light emitting structure, etc.). For example, after theupper structure is formed on the substrate 110, the rigid glasssubstrate 105 may be removed. It may not be straightforward to directlyform the upper structure on the first and second organic film layers 111and 113 and the first and second barrier layers 112 and 114 because thefirst and second organic film layers 111 and 113 and the first andsecond barrier layers 112 and 114 are relatively thin and flexible.Accordingly, the upper structure may be formed on the substrate 110 andthe rigid glass substrate, and then the first and second organic filmlayers 111 and 113 and the first and second barrier layers 112 and 114may serve as the substrate 110 after the removal of the rigid glasssubstrate 105.

A buffer layer may be formed on the substrate 110. The buffer layer maybe formed on the entire substrate 110. The buffer layer may help preventthe diffusion of metal atoms and/or impurities from the substrate 110.In addition, the buffer layer may control a rate of a heat transfer in acrystallization process for forming an active layer, thereby obtainingsubstantially uniform active layer. Further, the buffer layer mayimprove a surface flatness of the substrate 110 when a surface of thesubstrate 110 is relatively irregular. According to a type of thesubstrate 110, at least two buffer layers may be provided on thesubstrate 110, or the buffer layer may not be formed. For example, thebuffer layer may be formed using organic materials or inorganicmaterials.

Referring to FIG. 11, an active layer 130 may be formed in a displayregion 10 on the substrate 110. The active layer 130 may be formed usingan oxide semiconductor, an inorganic semiconductor, an organicsemiconductor, etc. The active layer 130 may have a source region and adrain region.

A gate insulation layer 150 may be formed on the active layer 130. Thegate insulation layer 150 may cover the active layer 130 in the displayregion 10 on the substrate 110, and may extend in a first direction 11 lfrom the display region 10 into an opening region 20. Thus, the gateinsulation layer 150 may be formed on the entire substrate 110. Forexample, the gate insulation layer 150 may sufficiently cover the activelayer 130 on the substrate 110, and may have a substantially flat uppersurface without a step around the active layer 130. In anotherimplementation, the gate insulation layer 150 may cover the active layer130 on the substrate 110, and may be formed with a substantially uniformthickness along a profile of the active layer 130. The gate insulationlayer 150 may be formed using silicon compound, metal oxide, etc. Inanother implementation, the gate insulation layer 150 may have amulti-layered structure including a plurality of insulation layers. Forexample, the insulation layers may have different thicknesses to eachother or include different materials to each other.

A gate electrode 170 may be formed in the display region 10 on the gateinsulation layer 150. The gate electrode 170 may be formed on a portionof the gate insulation layer 150 under which the active layer 130 islocated. The gate electrode 170 may be formed using a metal, a metalalloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc. These may be used alone or in a suitable combinationthereof. In another implementation, the gate electrode 170 may have amulti-layered structure including a plurality of layers.

An insulating interlayer may be formed on the gate electrode 170. Theinsulating interlayer 190 may cover the gate electrode 170 in thedisplay region 10 on the gate insulation layer 150, and may extend inthe first direction D1. Thus, the insulating interlayer 190 may beformed on the entire gate insulation layer 150. For example, theinsulating interlayer 190 may sufficiently cover the gate electrode 170on the gate insulation layer 150, and may have a substantially flatupper surface without a step around the gate electrode 170. In anotherimplementation, the insulating interlayer 190 may cover the gateelectrode 170 on the gate insulation layer 150, and may be formed with asubstantially uniform thickness along a profile of the gate electrode170. The insulating interlayer 190 may be formed using silicon compound,metal oxide, etc. In an example embodiment, the insulating interlayer190 may have a multi-layered structure including a plurality ofinsulation layers. The insulation layers may have different thicknessesto each other or include different materials to each other.

Referring to FIG. 12, a source electrode 210 and a drain electrode 230may be formed in the display region 10 on the insulating interlayer 190.The source electrode 210 may be connected to the source region of theactive layer 130 via a contact hole formed by removing a first portionof the gate insulation layer 150 and the insulating interlayer 190. Thedrain electrode 230 may be connected to the drain region of the activelayer 130 via a contact hole formed by removing a second portion of thegate insulation layer 150 and the insulating interlayer 190. Each of thesource electrode 210 and the drain electrode 230 may include a metal, analloy, metal nitride, conductive metal oxide, transparent conductivematerials, etc. These may be used alone or in a suitable combinationthereof. In an example embodiment, each of the source and drainelectrodes 210 and 230 may have a multi-layered structure including aplurality of layers. Accordingly, a semiconductor element 250 includingthe active layer 130, the gate insulation layer 150, the gate electrode170, the insulating interlayer 190, the source electrode 210, and thedrain electrode 230 may be formed.

A planarization layer 270 may be formed on the insulating interlayer190, the source electrode 210, and the drain electrode 230. Theplanarization layer 270 may cover the source and drain electrodes 210and 230 in the display region 10 on the insulating interlayer 190, andmay not be formed in the peripheral region 30. Thus, the planarizationlayer 270 may be formed only in the display region 10 on the insulatinginterlayer 190. For example, the planarization layer 270 may be formedwith a relatively high thickness in the display region 10. In this case,the planarization layer 270 may have a substantially flat upper surface,and a planarization process may be further performed on theplanarization layer 270 to implement the flat upper surface of theplanarization layer 270. In another implementation, the planarizationlayer 270 may be formed with a substantially uniform thickness along aprofile of the source and drain electrodes 210 and 230 in the displayregion 10 on the insulating interlayer 190. The planarization layer 270may be formed using organic materials.

A lower electrode 290 may be formed in the display region 10 on theplanarization layer 270. The lower electrode 290 may be connected to thedrain electrode 230 via a contact hole formed by removing a portion ofthe planarization layer 270. In addition, the lower electrode 290 may beelectrically connected to the semiconductor element 250. The lowerelectrode 290 may be formed using a metal, a metal alloy, metal nitride,conductive metal oxide, transparent conductive materials, etc. These maybe used alone or in a suitable combination thereof. In an exampleembodiment, the lower electrode 290 may have a multi-layered structureincluding a plurality of layers.

Referring to FIG. 13, after the lower electrode 290 is formed, the gateinsulation layer 150 and the insulating interlayer 190 that are locatedin a peripheral region 30 may be removed. After the gate insulationlayer 150 and the insulating interlayer 190 that are located in theperipheral region 30 are removed, a groove 930 having an enlarged lowerportion may be formed in the substrate 110 located in the peripheralregion 30 through a laser or a dry etching process. The groove 930 mayhave an under-cut shape. For example, a trench, which has a second widthW2, formed in the second organic film layer 113 and an opening, whichhas a first width W1 that is less than the second width W2, formed inthe second barrier layer 114 may be defined as the under-cut shape. Inanother implementation, an opening, which has a second width W1 formedin the second organic film layer 113 and an opening, which has a firstwidth W1 that is less than the second width W2, formed in the secondbarrier layer 114 may be defined as the under-cut shape. In this case,an upper surface of the first barrier layer 112 may be exposed throughthe opening of the second organic film layer 113.

First and second protruded portions 116 and 117 that protrude in aninner portion of the trench on the trench of the second organic filmlayer 113 may be defined by the opening of the second barrier layer 114.For example, the first protruded portion 116 may be located adjacent toa boundary of the peripheral region 30 and the opening region 20. Thesecond protruded portion 117 may face the first protruded portion 116,and may be spaced apart from the first protruded portion 116. Inaddition, a space located under each of the first and second protrudedportions 116 and 117 may be defined as first and second spaces 118 and119 (refer to FIG. 14). Accordingly, the trench of the second organicfilm layer 113, the first and second protruded portions 116 and 117 ofthe second barrier layer 114, and the opening of the second barrierlayer 114 may be defined as the groove 930, which has the enlarged lowerportion, formed in the substrate 110 located in the peripheral region30. In an example embodiment, a plurality of grooves may be formed to bespaced apart from the groove 930 by the first direction D1, and may beformed to be spaced apart from the groove 930 by a direction that isopposite to the first direction D1.

Referring to FIG. 14, a pixel defining layer 310 may be formed in thedisplay region 10 on the planarization layer 270, and may not be formedin the peripheral region 30. Thus, the pixel defining layer 310 may beformed only in the display region 10. For example, the pixel defininglayer 310 may cover both lateral portions of the lower electrode 290,and may expose a portion of an upper surface of the lower electrode 290.The pixel defining layer 310 may be formed using organic materials.

A light emitting layer 330 may be formed on the lower electrode 290 andthe pixel defining layer 310 in the display region 10 and extend in thefirst direction D1, and may be formed in the peripheral region 30. In anexample embodiment, the light emitting layer 330 may be partially formedin an inner portion of the groove 930, and the light emitting layer 330in a portion where the groove 930 is located may be separated in a depthdirection. Thus, the light emitting layer 330 may be separated in theperipheral region 30. Thus, the light emitting layer 330 may beseparated in the peripheral region 30 by the first and second spaces 118and 119.

The light emitting layer 330 may have a multi-layered structureincluding an EML, an HIL, an HTL, an ETL, an EIL, etc. In an exampleembodiment, the EML, the HIL, the HTL, the ETL, and the EIL may beformed in the peripheral region 30. In an example embodiment, the HIL,the HTL, the ETL, and the EIL except for the EML may be formed in theperipheral region 30.

The EML of the light emitting layer 330 may be formed using at least oneof light emitting materials capable of generating different colors oflight (e.g., a red color of light, a blue color of light, and a greencolor of light, etc.) according to sub-pixels. In anotherimplementation, the EML of the light emitting layer 330 may generallygenerate a white color of light by stacking a plurality of lightemitting materials capable of generating different colors of light suchas a red color of light, a green color of light, a blue color of light,etc. In this case, a color filter may be formed on the light emittinglayer 330 that is formed on the lower electrode 290. The color filtermay include at least one selected from a red color filter, a green colorfilter, and a blue color filter. In another implementation, the colorfilter may include a yellow color filter, a cyan color filter, and amagenta color filter. The color filter may be formed using aphotosensitive resin, a color photoresist, etc.

An upper electrode 340 may be formed on the light emitting layer 330.The upper electrode 340 may be formed to overlap the light emittinglayer 330 in the display region 10 and extend in the first direction D1,and may be formed in the peripheral region 30 on the light emittinglayer 330. In an example embodiment, the upper electrode 340 may bepartially formed in the inner portion of the groove 930, and the upperelectrode 340 in a portion where the groove 930 is located may beseparated in the depth direction. Thus, the upper electrode 340 may beseparated in the peripheral region 30. Thus, the upper electrode 340 maybe separated in the peripheral region 30 by the first and second spaces118 and 119.

The upper electrode 340 may be formed using a metal, a metal alloy,metal nitride, conductive metal oxide, transparent conductive materials,etc. These may be used alone or in a suitable combination thereof. In anexample embodiment, the upper electrode 340 may have a multi-layeredstructure including a plurality of layers.

Accordingly, a light emitting structure 200 including the lowerelectrode 290, the light emitting layer 330, and the upper electrode 340may be formed.

Referring to FIG. 15, a capping layer may be formed on the upperelectrode 340. The capping layer may be formed to overlap the upperelectrode 340 in the display region 10 and extend in the first directionD1, and may be formed in the peripheral region 30 on the upper electrode340. In an example embodiment, the capping layer may be partially formedin the inner portion of the groove 930, and the capping layer in aportion where the groove 930 is located may be separated in the depthdirection. Thus, the capping layer may be separated in the peripheralregion 30. Thus, the capping layer may be separated in the peripheralregion 30 by the first and second spaces 118 and 119. The capping layermay protect the light emitting structure 200, and may be formed usingorganic materials such as a triamine derivative, arylenediaminederivative, CBP, Alq3, etc.

A first TFE layer 451 may be formed in the display region 10 and theperipheral region 30 on the upper electrode 340. The first TFE layer 451may cover the upper electrode 340 in the display region 10, and may beformed with a substantially uniform thickness along a profile of theupper electrode 340 and may extend in the peripheral region 30. Thefirst TFE layer 451 may be formed along a profile of the upper electrode340 in the peripheral region 30. Thus, the first TFE layer 451 may becontinuously formed in a portion where the groove 930 is formed. In anexample embodiment, the first TFE layer 451 may completely cover thegroove 930. Thus, the first TFE layer 451 may cover the first and secondprotruded portions 116 and 117, and may be formed in the first andsecond spaces 118 and 119 and completely cover the light emitting layer330 and the upper electrode 340 that are formed inside the groove 930.Thus, the first TFE layer 451 may be in direct contact with the secondorganic film layer 113 in the first and second spaces 118 and 119. Thefirst TFE layer 451 may help prevent the light emitting structure 200from being deteriorated by the permeation of moisture, water, oxygen,etc. In addition, the first TFE layer 451 may protect the light emittingstructure 200 from external impacts. The first TFE layer 451 may beformed using inorganic materials having flexibility.

A second TFE layer 452 may be formed in the display region 10 on thefirst TFE layer 451, and may not be formed in the peripheral region 30.Thus, the second TFE layer 452 may be formed only in the display region10. The second TFE layer 452 may improve the flatness of the OLED device100, and may protect the light emitting structure 200. The second TFElayer 452 may be formed using organic materials having the flexibility.

Referring to FIG. 16, a third TFE layer 453 may be formed in the displayregion 10 on the second TFE layer 452 and in the peripheral region 30 onthe first TFE layer 451. The third TFE layer 453 may cover the secondTFE layer 452 in the display region 10, and may be formed with asubstantially uniform thickness along a profile of the second TFE layer452 and may extend in the peripheral region 30. The third TFE layer 453may be formed with a substantially uniform thickness along a profile ofthe first TFE layer 451 in the peripheral region 30. Thus, the third TFElayer 453 may be continuously formed in a portion where the groove 930is formed. The third TFE layer 453 together with the first TFE layer 451may help prevent the light emitting structure 200 from beingdeteriorated by the permeation of moisture, water, oxygen, etc. Inaddition, the third TFE layer 453 together with the first and second TFElayers 451 and 452 may protect the light emitting structure 200 fromexternal impacts. The third TFE layer 453 may be formed using inorganicmaterials having the flexibility.

Accordingly, a TFE structure 450 including the first TFE layer 451, thesecond TFE layer 452, and the third TFE layer 453 may be formed. Inanother implementation, the TFE structure 450 may have five layersstructure where first to fifth TFE layers are stacked or seven layersstructure where first to seventh TFE layers are stacked.

A first insulation layer 390 may be formed in the display region 10 andthe peripheral region 30 on the third TFE layer 453. The firstinsulation layer 390 may cover the third TFE layer 453 in the displayregion 10, and may be formed with a substantially uniform thicknessalong a profile of the third TFE layer 453 and may extend in theperipheral region 30. The first insulation layer 390 may be formed witha substantially uniform thickness along a profile of the third TFE layer453 in the peripheral region 30. Thus, the first insulation layer 390may be continuously formed in a portion where the first insulation layer390 is formed. The first insulation layer 390 may be formed usingorganic materials or inorganic materials. In another implementation, thefirst insulation layer 390 may have a multi-layered structure includinga plurality of insulation layers. For example, the insulation layers mayhave different thicknesses to each other or include different materialsto each other.

Referring to FIG. 17, an organic insulation pattern 490 may be formed inthe peripheral region 30 on the first insulation layer 390. In anexample embodiment, the organic insulation pattern 490 may be formedonly in the peripheral region 30. The organic insulation pattern 490 maybe formed with a relatively high thickness in the peripheral region 30on the first insulation layer 390. In this case, the organic insulationpattern 490 may have a substantially flat upper surface, and aplanarization process may be further performed on the organic insulationpattern 490 to implement the flat upper surface of the organicinsulation pattern 490. In another implementation, the organicinsulation pattern 490 may be formed with a substantially uniformthickness along a profile of the first insulation layer 390 in thedisplay region 10 on the first insulation layer 390. The organicinsulation pattern 490 may be formed using organic materials such as aphotoresist, a polyacryl-based resin), a polyimide-based resin, apolyamide-based resin, a siloxane-based resin, an acryl-based resin, anepoxy-based resin.

Referring to FIG. 18, first touch screen electrodes 382 and second touchscreen electrodes 384 may be formed in the display region 10 on thefirst insulation layer 390 (refer to FIG. 9). Each of the first touchscreen electrodes 382 may extend in the second direction D2, and may bespaced apart from each other by the first direction D1. The second touchscreen electrodes 384 may be spaced apart from each other in the seconddirection D2 between adjacent two first touch screen electrodes 382among the first touch screen electrodes 382. For example, each of thefirst and second touch screen electrodes 382 and 384 may be formed usinga carbon nano-tube (CNT), transparent conductive oxide, ITO, indiumgallium zinc oxide (IGZO), ZnO, a graphene, Ag nanowire (AgNW), Cu, Cr,etc.

A second insulation layer 395 may be formed in the display region 10 onthe first and second touch screen electrodes 382 and 384. The secondinsulation layer 395 may cover the first and second touch screenelectrodes 382 and 384 in the display region 10, and may be formed witha substantially uniform thickness along a profile of the first andsecond touch screen electrodes 382 and 384 and may extend in theperipheral region 30. The second insulation layer 395 may be formedalong a profile of the organic insulation pattern 490 in the peripheralregion 30. Thus, the second insulation layer 395 may be in contact withan upper surface of the first insulation layer 390 in the display region10, and may be in contact with an upper surface of the organicinsulation pattern 490 in the peripheral region 30. The secondinsulation layer 395 may be formed using organic materials or inorganicmaterials. In another implementation, the second insulation layer 395may have a multi-layered structure including a plurality of insulationlayers. The insulation layers may have different thicknesses to eachother or include different materials to each other.

Referring to FIG. 19, touch screen connection electrodes 386 may beformed in the display region 10 on the second insulation layer 395(refer to FIG. 9). The touch screen connection electrodes 386 mayelectrically connect adjacent two second touch screen electrodes 384 inthe first direction D1 among the second touch screen electrodes 384through a contact hole. For example, the touch screen connectionelectrodes 386 and the first and second touch screen electrodes 382 and384 may be formed using same materials. In another implementation, thetouch screen connection electrodes 386 may be formed using a metal, analloy of a metal, metal nitride, conductive metal oxide, transparentconductive materials, etc. These may be used alone or in a suitablecombination thereof.

A conductive pattern 400 may be formed in the peripheral region 30 onthe second insulation layer 395. In an example embodiment, to detect adamage of the second protruded portion 117, the conductive pattern 400may be formed to overlap the second protruded portion 117 of the groove930. In another implementation, the conductive pattern 400 may be formedto overlap the first protruded portion 116 of the groove 930.

For example, the conductive pattern 400 on the groove 930 may be formedalong a profile of the second protruded portion 117 of the groove 930.The conductive pattern 400 may substantially surround the opening region20. The conductive pattern 400 may include a first sub-conductivepattern 401 and second sub-conductive patterns 402 (refer to FIG. 6).The first sub-conductive pattern 401 may have a plan shape of apartially opened circle including an open portion, and the secondsub-conductive patterns 402 may extend from the open portion of thefirst sub-conductive pattern 401 in the second direction D2. In anexample embodiment, the first sub-conductive pattern 401 and the secondsub-conductive patterns 402 may be integrally formed at a same layer.

In another implementation, the first sub-conductive pattern 401 may beformed on the second sub-conductive patterns 402, and the open portionof the first sub-conductive pattern 401 may be connected to a distal endof the second sub-conductive patterns 402 through a contact hole.Otherwise, the second sub-conductive patterns 402 may be formed on thefirst sub-conductive pattern 401, and the open portion of the firstsub-conductive pattern 401 may be connected to a distal end of thesecond sub-conductive patterns 402 through a contact hole.

The first sub-conductive pattern 401 may be formed to overlap the groove930. For example, the first sub-conductive pattern 401 may be formed tooverlap the second protruded portion 117 of the groove 930. In anotherimplementation, the first sub-conductive pattern 401 may overlap thefirst protruded portion 116 of the groove 930.

The conductive pattern 400 and the touch screen connection electrodes386 may be simultaneously formed using same materials. In anotherimplementation, the conductive pattern 400 and the first and secondtouch screen electrodes 382 and 384 may be simultaneously formed usingsame materials.

A protective insulation layer 410 may be formed in the display region 10and the peripheral region 30 on the second insulation layer 395, thetouch screen connection electrodes 386, and the conductive pattern 400.The protective insulation layer 410 may be formed with a relatively highthickness on the second insulation layer 395. In this case, theprotective insulation layer 410 may have a substantially flat uppersurface. In another implementation, the protective insulation layer 410may cover the touch screen connection electrodes 386 and the conductivepattern 400 in the display region 10 and the peripheral region 30 on thesecond insulation layer 395, and may be formed with a substantiallyuniform thickness along a profile of the touch screen connectionelectrodes 386 and the conductive pattern 400. The protective insulationlayer 410 may be formed using organic materials.

As described above, a touch screen structure 380 including the firstinsulation layer 390, the first touch screen electrodes 382, the secondtouch screen electrodes 384, the second insulation layer 395, the touchscreen connection electrodes 386, and the protective insulation layer410 may be formed.

After the touch screen structure 380 is formed, a laser may beirradiated in the opening region 20 on the protective insulation layer410. In another implementation, a different etching process may beperformed to expose the opening region 20 on the protective insulationlayer 410.

Referring to FIGS. 20 and 6, an opening 910 may be formed in the openingregion 20 through the laser irradiation, and a functional module 700 maybe formed in the opening 910. In an example embodiment, the functionalmodule 700 may be in contact with a side surface of the substrate 110, aside surface of the light emitting layer 330, a side surface of theupper electrode 340, a side surface of the first TFE layer 451, a sidesurface of the third TFE layer 453, a side surface of the firstinsulation layer 390, a side surface of the organic insulation pattern490, a side surface of the second insulation layer 395, and a sidesurface of the protective insulation layer 410 in a boundary of theperipheral region 30 and the opening region 20. For example, thefunctional module 700 may include a camera module, a face recognitionsensor module, a pupil recognition sensor module, acceleration andgeomagnetic sensor modules, proximity and infrared sensor modules, and alight intensity sensor module, etc. After the functional module 700 isformed, the rigid glass substrate 105 may be removed from the substrate110. Accordingly, the OLED device 100 illustrated in FIG. 6 may bemanufactured.

FIG. 21 is a plan view illustrating an OLED device in accordance with anexample embodiment, and FIG. 22 is a partially enlarged plan viewcorresponding to region ‘13’ of FIG. 21. FIG. 23 is a partially enlargedplan view illustrating an example of a conductive pattern included inthe OLED device of FIG. 22, and FIG. 24 is a cross-sectional view takenalong lines I-I′ of FIG. 22. An OLED device 500 illustrated in FIGS. 21,22, and 24 may have a configuration substantially the same as or similarto that of an OLED device 100 described with reference to FIGS. 1through 9 except for a conductive pattern 1400. In FIGS. 21, 22, and 24,detailed descriptions for elements that are substantially the same as orsimilar to elements described with reference to FIGS. 1 through 9 maynot be repeated.

Referring to FIGS. 21, 22, and 24, the OLED device 500 may include asubstrate 110, a semiconductor element 250, a planarization layer 270, alight emitting structure 200, a pixel defining layer 310, a TFEstructure 450, a touch screen structure 380, an organic insulationpattern 490, a conductive pattern 1400, a functional module 700, etc.The substrate 110 may include a first organic film layer 111, a firstbarrier layer 112, a second organic film layer 113, and a second barrierlayer 114. As the OLED device 500 has the display region 10, the openingregion 20, the peripheral region 30, and the pad region 40, thesubstrate 110 may be divided into the display region 10, the openingregion 20, the peripheral region 30, and the pad region 40. In addition,the touch screen structure 380 may include a first insulation layer 390,a plurality of first touch screen electrodes 382, a plurality of secondtouch screen electrodes 384, a plurality of touch screen connectionelectrodes 386, a second insulation layer 395, and a protectiveinsulation layer 410.

The conductive pattern 1400 may be in the peripheral region 30 on thesecond insulation layer 395. In an example embodiment, to detect adamage of the first and second protruded portions 116 and 117, theconductive pattern 1400 may overlap the first and second protrudedportions 116 and 117 of the groove 930.

For example, the conductive pattern 1400 on the groove 930 may bedisposed along a profile of the first and second protruded portions 116and 117 of the groove 930. As illustrated in FIG. 22, the conductivepattern 1400 may include a first sub-conductive pattern, secondsub-conductive pattern, a third sub-conductive patterns, and a fourthsub-conductive pattern. The first sub-conductive pattern may have a planshape of a partially opened circle including top and bottom openportions, and may overlap the second protruded portion 117 of the groove930. The second sub-conductive pattern may have a plan shape of apartially opened circle including a bottom open portion, and may overlapthe first protruded portion 116 of the groove 930. The thirdsub-conductive patterns may extend from the top open portion of thefirst sub-conductive pattern in the second direction D2. The fourthsub-conductive patterns may connect the bottom open portion of the firstsub-conductive pattern and the bottom open portion of the secondsub-conductive pattern. In an example embodiment, the firstsub-conductive pattern, the second sub-conductive pattern, the thirdsub-conductive patterns, and the fourth sub-conductive pattern may beintegrally formed at a same layer.

In an example embodiment, as illustrated in FIG. 23, the OLED device 500may include a first conductive pattern 400 and a second conductivepattern 600. The first conductive pattern 400 on the groove 930 may bedisposed along a profile of the second protruded portion 117 of thegroove 930, and the second conductive pattern 600 on the groove 930 maybe disposed along a profile of the first protruded portion 116 of thegroove 930. Thus, the first conductive pattern 400 may substantiallysurround the second conductive pattern 600. The first conductive pattern400 may include a first sub-conductive pattern and second sub-conductivepatterns. A portion of the first sub-conductive pattern may have a planshape of a partially opened circle including an open portion, and thesecond sub-conductive patterns may extend from the open portion of thefirst sub-conductive pattern in the second direction D2. In an exampleembodiment, the first sub-conductive pattern and the secondsub-conductive patterns may be integrally formed at a same layer. Inaddition, the second conductive pattern 600 may include a thirdsub-conductive pattern and fourth sub-conductive patterns. A portion ofthe third sub-conductive pattern may have a plan shape of a partiallyopened circle including an open portion, and the fourth sub-conductivepatterns may extend from the open portion of the first sub-conductivepattern in the second direction D2. In an example embodiment, the thirdsub-conductive pattern and the fourth sub-conductive patterns may beintegrally formed at a same layer.

The OLED device 500 in accordance with an example embodiment may includethe conductive pattern 1400, the pad electrodes 470, and the connectionwiring 370. Thus, the OLED device 500 may check whether the first andsecond protruded portions 116 and 117 is damaged. Accordingly, a defectratio of the OLED device 500 may be reduced by the OLED device 500checking whether the first and second protruded portions 116 and 117 isdamaged.

FIG. 25 is a cross-sectional view illustrating an OLED device inaccordance with an example embodiment. An OLED device 800 illustrated inFIG. 25 may have a configuration substantially the same as or similar tothat of an OLED device 500 described with reference to FIGS. 21 through24 except for a second groove 950 and a third groove 970. In FIG. 25,detailed descriptions for elements that are substantially the same as orsimilar to elements described with reference to FIGS. 21 through 24 maynot be repeated.

Referring to FIG. 25, the OLED device 800 may include a substrate 110, asemiconductor element 250, a planarization layer 270, a light emittingstructure 200, a pixel defining layer 310, a TFE structure 450, a touchscreen structure 380, an organic insulation pattern 490, a conductivepattern 400, a functional module 700, a block structure 550, etc. Thesubstrate 110 may include a first organic film layer 111, a firstbarrier layer 112, a second organic film layer 113, and a second barrierlayer 114. As the OLED device 800 has the display region 10, the openingregion 20, the peripheral region 30, and the pad region 40, thesubstrate 110 may be divided into the display region 10, the openingregion 20, the peripheral region 30, and the pad region 40. In addition,the light emitting structure 200 may include a lower electrode 290, alight emitting layer 330, and an upper electrode 340, and the TFEstructure 450 may include a first TFE layer 451, a second TFE layer 452,and a third TFE layer 453. Further, the touch screen structure 380 mayinclude a first insulation layer 390, a plurality of first touch screenelectrodes 382, a plurality of second touch screen electrodes 384, aplurality of touch screen connection electrodes 386, a second insulationlayer 395, and a protective insulation layer 410.

First, second, and third grooves 930, 950, and 970 having enlarged lowerportion may be formed. For example, in the substrate 110, the firstgroove 930 may be formed in the peripheral region 30, and the second thesecond groove 950 may be formed between the first groove 930 and thefunctional module 700. The third groove 970 may be formed in the displayregion 10. In addition, the second groove 950 may surround thefunctional module 700, and the first groove 930 may surround the secondgroove 950. The third groove 970 may surround the first groove 930. Inanother implementation, at least one groove having an enlarged lowerportion may be further formed between the second groove 950 and thefunctional module 700 and between the third groove 970 and the firstgroove 930.

The OLED device 800 in accordance with an example embodiment may includethe first through third grooves 930, 950, and 970. Thus, the lightemitting layer 330 and the upper electrode 340 may be readily separateddue to the relatively large number of grooves having the enlarged lowerportion. In addition, as the relatively large number of grooves havingthe enlarged lower portion are in the peripheral region 30, the amountof an impact may be reduced by the relatively large number of grooveshaving the enlarged lower portion, when an external impact or a stressin a manufacturing process is transmitted to the substrate 110 in adirection from the opening region 20 into the display region 10.Further, as the relatively large number of grooves having the enlargedlower portion are in the peripheral region 30, a contact area of thefirst TFE layer 451 and the substrate 110 may be relatively increased inthe peripheral region 30. Accordingly, the OLED device 800 may helpprevent the first TFE layer 451 from being separated from the substrate110.

The block structure 550 may be between the first groove 930 and thethird groove 970 on the substrate 110 located in the peripheral region30. In an example embodiment, the block structure 550 may block aleakage of the second TFE layer 452. The block structure 550 may includeorganic materials or inorganic materials. In an example embodiment, theblock structure 550 may include organic materials.

The light emitting layer 330 may be on the pixel defining layer 310 andthe lower electrode 290 in the display region 10 and extend in the firstdirection DE and may be in the peripheral region 30 on the substrate 110and the block structure 550. In an example embodiment, the lightemitting layer 330 may be partially in an inner portion of the firstthrough third grooves 930, 950, and 970 each, and the light emittinglayer 330 in a portion where each of the first through third grooves930, 950, and 970 is located may be separated in a depth direction.Thus, the light emitting layer 330 may be separated in the first throughthird grooves 930, 950, and 970. Thus, the light emitting layer 330 maybe separated in the peripheral region 30 by the first and second spaces118 and 119.

The upper electrode 340 may be on the light emitting layer 330. Theupper electrode 340 may overlap the light emitting layer 330 in thedisplay region 10 and may extend in the first direction DE and may be inthe peripheral region 30 on the light emitting layer 330. In an exampleembodiment, the upper electrode 340 may be partially in the innerportion of the first through third grooves 930, 950, and 970 each, andthe upper electrode 340 in a portion where each of the first throughthird grooves 930, 950, and 970 is located may be separated in the depthdirection. Thus, the upper electrode 340 may be separated in each of thefirst through third grooves 930, 950, and 970.

The first TFE layer 451 may be in the display region 10 and theperipheral region 30 on the upper electrode 340. The first TFE layer 451may cover the upper electrode 340 in the display region 10, and may bedisposed with a substantially uniform thickness along a profile of theupper electrode 340 and may extend in the peripheral region 30. Thefirst TFE layer 451 may be disposed along a profile of the upperelectrode 340 in the peripheral region 30. Thus, the first TFE layer 451may be continuously disposed in a portion where each of the firstthrough third grooves 930, 950, and 970 is formed. In an exampleembodiment, the first TFE layer 451 may completely cover each of thefirst through third grooves 930, 950, and 970. Thus, the first TFE layer451 may completely cover the light emitting layer 330 and the upperelectrode 340 that are disposed inside each of the first through thirdgrooves 930, 950, and 970. Thus, the first TFE layer 451 may be indirect contact with the second organic film layer 113 in the first andsecond spaces 118 and 119.

The second TFE layer 452 may be in the display region 10 and a portionof the peripheral region 30 on the first TFE layer 451. In an exampleembodiment, the second TFE layer 452 may fill an inner portion of thethird groove 970, and may not be disposed inside the first groove 930and the second groove 950.

The third TFE layer 453 may be in the display region 10 on the secondTFE layer 452 and in the peripheral region 30 on the first TFE layer451. The third TFE layer 453 may cover the second TFE layer 452 in thedisplay region 10, and may be disposed with a substantially uniformthickness along a profile of the second TFE layer 452 and may extend inthe peripheral region 30. The third TFE layer 453 may be disposed with asubstantially uniform thickness along a profile of the first TFE layer451 in the peripheral region 30. Thus, the third TFE layer 453 may becontinuously formed in a portion where the second groove 950 and thethird groove 970 each are formed.

The first insulation layer 390 may be in the display region 10 and theperipheral region 30 on the third TFE layer 453. The first insulationlayer 390 may cover the third TFE layer 453 in the display region 10,and may be disposed with a substantially uniform thickness along aprofile of the third TFE layer 453 and may extend in the peripheralregion 30. The first insulation layer 390 may be disposed with asubstantially uniform thickness along a profile of the third TFE layer453 in the peripheral region 30. Thus, the first insulation layer 390may be continuously disposed in a portion where the second groove 950and the third groove 970 each are formed.

The organic insulation pattern 490 may be in the peripheral region 30 onthe first insulation layer 390. The organic insulation pattern 490 maybe disposed with a relatively high thickness in the peripheral region 30and a portion of the display region 10 on the first insulation layer390. In this case, the organic insulation pattern 490 may have asubstantially flat upper surface.

The conductive pattern 1400 may be in the peripheral region 30 on thesecond insulation layer 395. In an example embodiment, to detect adamage of the first protruded portion 116 and the second protrudedportion 117, the conductive pattern 1400 may overlap the first andsecond protruded portions 116 and 117 of the first groove 930. Forexample, the conductive pattern 1400 on the first groove 930 may bedisposed along a profile of each of the first and second protrudedportions 116 and 117 of the first groove 930.

In an example embodiment, conductive patterns may be further disposed ona protruded portion of each of the second and third grooves 950 and 970.

Example embodiments may be applied to various display devices includingan OLED device. For example, example embodiments may be applied tovehicle-display device, a ship-display device, an aircraft-displaydevice, portable communication devices, display devices for display orfor information transfer, a medical-display device, etc.

By way of summation and review, a display device such as an OLED devicemay have a display region where an image is displayed and a non-displayregion in which gate drivers, data drivers, wirings, and functionalmodules (e.g., a camera module, a motion recognition sensor, etc.) aredisposed. Blocking patterns (for blocking penetration of water,moisture, etc., into a portion of the display region adjacent to thefunctional module) may be formed adjacent to a functional module.Blocking patterns may be susceptible to damage from external impact or astress in a manufacturing process, in which case a defect of a displaypixel may occur.

As described above, example embodiments relate to an organic lightemitting display device that may include a functional module in aportion of a display region. An OLED device according to an exampleembodiment may include a conductive pattern, pad electrodes, andconnection wiring, and the OLED device may check whether the secondprotruded portion is damaged. Accordingly, as the OLED device checkswhether the second protruded portion is damaged, a defect ratio of theOLED device may be reduced.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of example embodiments asset forth in the following claims.

What is claimed is:
 1. An organic light emitting display (“OLED”)device, comprising: a substrate having an opening region, a peripheralregion surrounding the opening region, and a display region surroundingthe peripheral region, the substrate including a first groove, which hasan enlarged lower portion, formed in the peripheral region and anopening formed in the opening region; a light emitting structure in thedisplay region on the substrate; a first conductive pattern overlappingthe first groove in the peripheral region on the substrate; and afunctional module in the opening of the substrate, wherein the substrateincludes: a first organic film layer; a first barrier layer on the firstorganic film layer; a second organic film layer on the first barrierlayer, the second organic film layer having a trench in the peripheralregion; and a second barrier layer on the second organic film layer, thesecond barrier layer being located on the trench and having a protrudedportion that protrudes in an inner portion of the trench, the secondbarrier layer having an opening defined by the protruded portion, andwherein the first conductive pattern overlaps the protruded portion ofthe second barrier layer.
 2. The OLED device as claimed in claim 1,wherein the first conductive pattern includes: a first sub-conductivepattern overlapping the first groove, the first sub-conductive patternhaving a plan shape of a partially opened circle including an openportion; and second sub-conductive patterns extending from the openportion of the first sub-conductive pattern in an outward direction. 3.The OLED device as claimed in claim 2, further comprising: padelectrodes on the substrate, the pad electrodes being electricallyconnected to an external device; and signal wirings, which are locatedon the substrate, disposed along an outer portion of the substrate, thesignal wirings electrically connecting the second sub-conductivepatterns and the pad electrodes.
 4. The OLED device as claimed in claim1, wherein the first groove surrounds the opening on the substrate. 5.The OLED device as claimed in claim 4, wherein the first groove has aplan shape of a circle.
 6. The OLED device as claimed in claim 1,wherein the first conductive pattern, which is located on the firstgroove, is disposed along a profile of an outer portion of the firstgroove.
 7. The OLED device as claimed in claim 1, wherein the protrudedportion of the second barrier layer includes: a first protruded portionlocated adjacent to the opening of the substrate; and a second protrudedportion facing the first protruded portion, the second protruded portionbeing spaced apart from the first protruded portion in a direction fromthe opening region into the peripheral region.
 8. The OLED device asclaimed in claim 7, further comprising: a second conductive pattern,which is on the first protruded portion, overlapping the first protrudedportion, wherein the first conductive pattern is overlapped on thesecond protruded portion.
 9. The OLED device as claimed in claim 8,wherein the first conductive pattern and the second conductive patternare connected to each other in a region of the peripheral region, andare integrally formed.
 10. The OLED device as claimed in claim 1,wherein the trench of the second organic film layer, the protrudedportion of the second barrier layer, and the opening of the secondbarrier layer are defined as the first groove having the enlarged lowerportion.
 11. The OLED device as claimed in claim 1, wherein the lightemitting structure includes: a lower electrode; a light emitting layeron the lower electrode; and an upper electrode on the light emittinglayer.
 12. The OLED device as claimed in claim 11, wherein the lightemitting layer extends in a direction from the display region into theperipheral region on the substrate, and is separated in a portion wherethe first groove is formed.
 13. The OLED device as claimed in claim 11,wherein the upper electrode extends in a direction from the displayregion into the peripheral region on the substrate, and is separated ina portion where the first groove is formed.
 14. The OLED device asclaimed in claim 11, wherein the light emitting layer and the upperelectrode are in at least a portion of an inner portion of the firstgroove.
 15. The OLED device as claimed in claim 11, further comprising:a thin film encapsulation structure on the light emitting structure; anda touch screen structure in the display region on the thin filmencapsulation structure.
 16. The OLED device as claimed in claim 15,wherein the thin film encapsulation structure includes: a first thinfilm encapsulation layer on the upper electrode, the first thin filmencapsulation layer including inorganic materials that have flexibility;a second thin film encapsulation layer on the first thin filmencapsulation layer, the second thin film encapsulation layer includingorganic materials that have flexibility; and a third thin filmencapsulation layer on the second thin film encapsulation layer, thethird thin film encapsulation layer including inorganic materials thathave flexibility.
 17. The OLED device as claimed in claim 16, whereineach of the first thin film encapsulation layer and the third thin filmencapsulation layer extends in a direction from the display region intothe peripheral region on the upper electrode, and is continuously in aportion where the first groove is formed.
 18. The OLED device as claimedin claim 16, wherein the touch screen structure includes: a firstinsulation layer in the display region on the third thin filmencapsulation layer; a touch screen electrode on the first insulationlayer; a second insulation layer on the touch screen electrode; a touchscreen connection electrode on the second insulation layer; and aprotective insulation layer on the touch screen connection electrode.19. The OLED device as claimed in claim 18, wherein the first insulationlayer extends in a direction from the display region into the peripheralregion on the third thin film encapsulation layer, and is continuouslyin a portion where the first groove is formed.
 20. The OLED device asclaimed in claim 18, further comprising an organic insulation pattern inthe peripheral region on the first insulation layer.
 21. The OLED deviceas claimed in claim 20, wherein the second insulation layer is incontact with an upper surface of the first insulation layer in thedisplay region, and is in contact with an upper surface of the organicinsulation pattern in the peripheral region.
 22. The OLED device asclaimed in claim 21, wherein the first conductive pattern is between thesecond insulation layer and the protective insulation layer.
 23. TheOLED device as claimed in claim 20, wherein the functional module is incontact with a side surface of the substrate, a side surface of thelight emitting layer, a side surface of the upper electrode, a sidesurface of the first thin film encapsulation layer, a side surface ofthe third thin film encapsulation layer, a side surface of the firstinsulation layer, a side surface of the organic insulation pattern, aside surface of the second insulation layer, and a side surface of theprotective insulation layer in a boundary of the peripheral region andthe opening region.
 24. The OLED device as claimed in claim 1, wherein:the substrate further includes at least one second groove, which has anenlarged lower portion, between the first groove and the functionalmodule, and the first groove surrounds the second groove.
 25. The OLEDdevice as claimed in claim 1, wherein the substrate further includes atleast one third groove surrounding the first groove.
 26. The OLED deviceas claimed in claim 25, further comprising a block structure between thefirst groove and the third groove in the peripheral region on thesubstrate, the block structure surrounding the first groove.